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Title: Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Abstract

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [3]
  1. Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Tohoku Univ., Sendai (Japan); Far Eastern Federal Univ., Vladivostok (Russia)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1253329
Alternate Identifier(s):
OSTI ID: 1244608
Grant/Contract Number:  
SC0014189; FG02-08ER46544
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; domain walls; antiferromagnetism; atomic force microscopy; electric fields; ferromagnetism

Citation Formats

Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., and Tretiakov, O. A. Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory. United States: N. p., 2016. Web. doi:10.1063/1.4944996.
Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., & Tretiakov, O. A. Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory. United States. https://doi.org/10.1063/1.4944996
Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., and Tretiakov, O. A. 2016. "Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory". United States. https://doi.org/10.1063/1.4944996. https://www.osti.gov/servlets/purl/1253329.
@article{osti_1253329,
title = {Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory},
author = {Belashchenko, K. D. and Tchernyshyov, O. and Kovalev, Alexey A. and Tretiakov, O. A.},
abstractNote = {Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.},
doi = {10.1063/1.4944996},
url = {https://www.osti.gov/biblio/1253329}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 108,
place = {United States},
year = {Wed Mar 30 00:00:00 EDT 2016},
month = {Wed Mar 30 00:00:00 EDT 2016}
}

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Cited by: 43 works
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Works referenced in this record:

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Orientation Growth and Magnetic Properties of Electrochemical Deposited Nickel Nanowire Arrays
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Observation of the magnetoelectric reversal process of the antiferromagnetic domain
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Antiferromagnetic domain wall creep driven by magnetoelectric effect
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Finite-size scaling effect on Néel temperature of antiferromagnetic Cr 2 O 3 (0001) films in exchange-coupled heterostructures
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Magnetoelectric control of topological phases in graphene
journal, September 2019


Magnetoelectric effect of epitaxial Cr 2 O 3 thin films with a conducting underlayer electrode
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Electron-induced massive dynamics of magnetic domain walls
journal, February 2020


Magnetic skyrmion bubble motion driven by surface acoustic waves
text, January 2017