Electron induced surface chemistry at the Cs/sapphire interface
- Sandia National Labs., Albuquerque, NM (United States)
- AEA Technology, Albuquerque, NM (United States)
Electron induced etching of sapphire in the presence of Cs has been studied using a variety of surface analytical techniques. We find that this process occurs on both the (0001) and (1102) orientations of sapphire. Monolayer amounts of Al and sub-oxides of Al are thermally desorbed from the surface at temperatures as low as 1000 K when the surface is irradiated with electrons in the presence of Cs. Etching is highly dependent on Cs coverage with the (0001) and (1102) surfaces requiring 2.0 {times} 10{sup 14} and 3.4 {times} 10{sup 14} atoms/cm{sup 2} to support etching, respectively. Adsorption profiles demonstrate that these coverages correspond to initial saturation of the surface with Cs. Electron damage of the surface in the absence of Cs also produces desorption of Al and sub-oxides of Al indicating a possible mechanism for etching. The impact of etching on the surface is to increase the adsorption capacity on the (0001) surface while decreasing both initial adsorption probability and capacity on the (1102) surface.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 125176
- Report Number(s):
- SAND-95-2312C; CONF-960109-3; ON: DE96001738
- Resource Relation:
- Conference: STAIF 96: space technology and applications international forum, Albuquerque, NM (United States), 7-11 Jan 1996; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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