Selective layer disordering in intersubband Al_0.028Ga_0.972 N/AlN superlattices with silicon nitride capping layer

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.8.061004· OSTI ID:1248572

Wierer, Jonathan J. ^[1]; Allerman, Andrew A. ^[1]; Skogen, Erik J. ^[1]; Tauke-Pedretti, Anna ^[1]; Vawter, Gregory A. ^[1]; Montaño, Ines ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We demonstrate the selective layer disordering in intersubband Al_0.028Ga_0.972 N/AlN superlattices using a silicon nitride (SiN_x) capping layer. The (SiN_x) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiN_x thickness. The layer disordering is caused by Si diffusion, and the SiN_x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiN_x layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1248572
• Report Number(s): SAND-2016-0433J; 618634
• Journal Information: Applied Physics Express, Vol. 8, Issue 6; ISSN 1882-0778
• Publisher: Japan Society of Applied Physics
• Country of Publication: United States
• Language: English

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