Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai; Li, Xufan; Lin, Ming -Wei; Wang, Kei

doi:10.1557/jmr.2016.35

Title: Persistent photoconductivity in two-dimensional Mo_1-xW _xSe₂–MoSe₂ van der Waals heterojunctions

Journal Article · Tue Feb 16 00:00:00 EST 2016 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2016.35· OSTI ID:1247942

Puretzky, Alexander A. ^[1]; Basile, Leonardo ^[2]; Idrobo, Juan Carlos ^[1]; Rouleau, Christopher M. ^[1]; Geohegan, David B. ^[1]; Xiao, Kai ^[1]; Li, Xufan ^[1]; Lin, Ming -Wei ^[1]; Wang, Kei ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Escuela Politecnica Nacional, Quito (Ecuador)

Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe₂ and p-type Mo_1-xW _xSe₂–MoSe₂ are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1247942

Journal Information:: Journal of Materials Research, Vol. 31, Issue 07; ISSN 0884-2914

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe ₂ Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan Advanced Functional Materials, Vol. 27, Issue 19 https://doi.org/10.1002/adfm.201603850	journal	October 2016
Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction Huo, Nengjie; Konstantatos, Gerasimos Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00722-1	journal	September 2017
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Band gap engineering of atomically thin two-dimensional semiconductors Ge, Cui-Huan; Li, Hong-Lai; Zhu, Xiao-Li Chinese Physics B, Vol. 26, Issue 3 https://doi.org/10.1088/1674-1056/26/3/034208	journal	March 2017
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