Characterization of Switching Filament Formation in TaOx Memristive Memory Films.
Conference
·
OSTI ID:1242129
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1242129
- Report Number(s):
- SAND2014-19384PE; 540944
- Resource Relation:
- Conference: Proposed for presentation at the Electronic Materials Conference held June 25-27, 2014, CA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Determining the Location and Size of Conductive Filaments in TaOx Memristive Devices Using Focused Ion Beam Irradiation.
Determining the Location and Size of Conductive Filaments in TaOx Memristive Devices Using Focused Ion Beam Irradiation.
Characterizing Switching Variability in TaOx Resistive Memories.
Conference
·
Wed Oct 01 00:00:00 EDT 2014
·
OSTI ID:1242129
+2 more
Determining the Location and Size of Conductive Filaments in TaOx Memristive Devices Using Focused Ion Beam Irradiation.
Conference
·
Wed Oct 01 00:00:00 EDT 2014
·
OSTI ID:1242129
+13 more
Characterizing Switching Variability in TaOx Resistive Memories.
Conference
·
Mon Jun 01 00:00:00 EDT 2015
·
OSTI ID:1242129
+5 more