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Title: Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction

Journal Article · · Crystal Growth and Design
 [1];  [1];  [2];  [2]
  1. Japan Atomic Energy Agency (JAEA), Hyogo (Japan); Univ. of Hyogo, Hyogo (Japan)
  2. Japan Atomic Energy Agency (JAEA), Hyogo (Japan)

The evolution of polytypism during GaAs nanowire growth was investigated with in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. The growth process was well reproduced by a simulation based on a layer-by-layer nucleation model. The good agreement between the measured and simulated results confirms that nucleation costs higher energy for the stackings changing the crystal structure than for those conserving the preceding structure. The transition in prevalent structure can be accounted for by the change of local growth conditions related to the shape of triple phase line rather than by the change in supersaturation level, which quickly reaches steady state after starting growth.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC00112704
OSTI ID:
1239775
Report Number(s):
BNL-108456-2015-JA; R&D Project: LS001
Journal Information:
Crystal Growth and Design, Vol. 15, Issue 10; ISSN 1528-7483
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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Cited By (2)

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality journal January 2018
Interface dynamics and crystal phase switching in GaAs nanowires journal March 2016

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