Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

doi:10.1021/acs.jpcc.5b09555

Title: Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

Journal Article · Wed Nov 18 00:00:00 EST 2015 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.5b09555· OSTI ID:1238656

Xiao, Xiaoyin ^[1]; Lu, Ping ^[1]; Fischer, Arthur J. ^[1]; Coltrin, Michael E. ^[1]; Wang, George T. ^[1]; Koleske, Daniel D. ^[1]; Tsao, Jeffrey Y. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In₂O₃ and/or Ga₂O₃) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1238656

Report Number(s):: SAND-2015-9888J; 607996

Journal Information:: Journal of Physical Chemistry. C, Vol. 119, Issue 50; ISSN 1932-7447

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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