Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; Lopez, Javier Garicia; Jaksic, Milko; Raisanen, Jyrki; Siegele, Rainer; Simon, Aliz; Vizkelethy, Gyorgy

doi:10.1016/j.nimb.2016.01.030

Title: Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

Journal Article · Mon Feb 08 00:00:00 EST 2016 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2016.01.030· OSTI ID:1238654

Vittone, Ettore ^[1]; Pastuovic, Zeljko ^[2]; Breese, Mark B. H. ^[3]; Lopez, Javier Garicia ^[4]; Jaksic, Milko ^[5]; Raisanen, Jyrki ^[6]; Siegele, Rainer ^[2]; Simon, Aliz ^[7]; Vizkelethy, Gyorgy ^[8]

Univ. of Torino, Torino (Italy)
ANSTO, Kirrawee, NSW (Austria)
National Univ. of Singapore (Singapore)
CNA, Sevilla (Spain)
Ruder Boskovic Institute, Zagreb (Croatia)
Univ. of Helsinki, Helsinki (Finland)
International Atomic Energy Agency, Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: International Atomic Energy Agency

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1238654

Report Number(s):: SAND-2015-9676J; 607657

Journal Information:: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 119, Issue 50; ISSN 0168-583X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DIB
damaging ion beam
PIB
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IBIC
ion beam induced charge
NIEL
non-ionizing energy loss
CCE
charge collection efficiency

Title: Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

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