Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Here, we demonstrate mobilities of >45 cm2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO2, instead of the more conventional 8–10 wt. %, and had varying ZrO2 content from 0 to 3 wt. %, with a subsequent reduction in In2O3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO2. The addition of ZrO2 yielded the highest mobilities at >55 cm2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1238327
- Report Number(s):
- NREL/JA-5K00-65866; JVTAD6
- Journal Information:
- Journal of Vacuum Science and Technology A, Vol. 34, Issue 2; ISSN 0734-2101
- Publisher:
- American Vacuum SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Design of n-Type Transparent Conducting Oxides: The Case of Transition Metal Doping in In 2 O 3
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journal | February 2018 |
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