In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

Gerbig, Yvonne B.; Michaels, C. A.; Bradby, Jodie E.; Haberl, Bianca; Cook, Robert F.

doi:10.1103/PhysRevB.92.214110

Title: In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

Journal Article · Thu Dec 17 00:00:00 EST 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.92.214110· OSTI ID:1237635

Gerbig, Yvonne B. ^[1]; Michaels, C. A. ^[2]; Bradby, Jodie E. ^[3]; Haberl, Bianca ^[4]; Cook, Robert F. ^[2]

National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Maryland, College Park, MD (United States)
National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)
Australian National Univ., Canberra (Australia)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; 7620

OSTI ID:: 1237635

Alternate ID(s):: OSTI ID: 1234065

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 92, Issue 21; ISSN 1098-0121

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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