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Title: Vertical GaN power diodes with a bilayer edge termination

Journal Article · · IEEE Transactions on Electron Devices
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Avogy Inc., San Jose, CA (United States)
  3. Lehigh Univ., Bethlehem, PA (United States)
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Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1236482
Report Number(s):
SAND-2015-7150J; 603200
Journal Information:
IEEE Transactions on Electron Devices, Vol. 63, Issue 1; ISSN 0018-9383
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 71 works
Citation information provided by
Web of Science

Cited By (9)

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges journal December 2018
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review journal January 2020
Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes journal December 2019
Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN journal February 2019
High-blocking-voltage UMOSFETs with reformed electric field distribution journal September 2018
Size dictated thermal conductivity of GaN journal September 2016
High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination journal July 2018
Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS journal December 2018
Modeling dislocation-related leakage currents in GaN p-n diodes journal December 2019

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Related Subjects

42 ENGINEERING
powder semiconductor devices
p-n junctions
gallium nitride
avalanche breakdown