Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

doi:10.1063/1.4935159

Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors

Journal Article · Tue Nov 03 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935159· OSTI ID:1236209

^[1]; Kim, J. K. ^[1]; Kadlec, E. A. ^[1]; Klem, J. F. ^[1]; Hawkins, S. D. ^[1]; Leonhardt, D. ^[1]; Coon, W. T. ^[1]; Fortune, T. R. ^[1]; Cavaliere, M. A. ^[1]; Tauke-Pedretti, A. ^[1]; Shaner, E. A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs _0.91Sb_0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F₁F₂|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1236209

Report Number(s):: SAND-2015-4641J; APPLAB; 590731

Journal Information:: Applied Physics Letters, Vol. 107, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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References (16)

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High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier Deng, Gongrong; Yang, Wenyun; Zhao, Peng Applied Physics Letters, Vol. 116, Issue 3 https://doi.org/10.1063/1.5133093	journal	January 2020
Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors Campione, Salvatore; Warne, Larry K.; Goldflam, Michael D. Journal of the Optical Society of America B, Vol. 35, Issue 9 https://doi.org/10.1364/josab.35.002144	journal	January 2018

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Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors