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Title: Studying Resist Stochastics with the Multivariate Poisson Propagation Model

Journal Article · · Journal of Photopolymer Science and Technology
 [1];  [1];  [1];  [2];  [2]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Center for X-ray Optics
  2. Univ. of California, Berkeley, CA (United States). EECS
+ Show Author Affiliations

Progress in the ultimate performance of extreme ultraviolet resist has arguably decelerated in recent years suggesting an approach to stochastic limits both in photon counts and material parameters. Here we report on the performance of a variety of leading extreme ultraviolet resist both with and without chemical amplification. The measured performance is compared to stochastic modeling results using the Multivariate Poisson Propagation Model. The results show that the best materials are indeed nearing modeled performance limits.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1234543
Report Number(s):
LBNL-186922; JSTEEW; ir:186922
Journal Information:
Journal of Photopolymer Science and Technology, Vol. 27, Issue 6; ISSN 0914-9244
Publisher:
The Society of Photopolymer Science and Technology (SPST)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (7)

Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic conference May 2004
Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography journal January 2003
The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm conference March 2012
Resist blur and line edge roughness conference May 2005
Effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
  • Naulleau, Patrick P.; Gallatin, Gregg M.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 6 https://doi.org/10.1116/1.3509437
journal November 2010
Evaluation of EUV resist materials for use at the 32 nm half-pitch node conference April 2008
Fundamental limits to EUV photoresist conference March 2007

Cited By (1)

Extreme ultraviolet patterning of tin-oxo cages journal July 2017

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