Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

doi:10.1063/1.4929815

Title: Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

Journal Article · Tue Sep 01 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929815· OSTI ID:1226042

Si, W. ^[1]; Zhang, C. ^[1]; Wu, L. ^[1]; Ozaki, T. ^[1]; Gu, G. ^[1]; Li, Q. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1226042

Report Number(s):: BNL-108397-2015-JA; R&D Project: MA012MABA; PO010; KC0202050; KC0201060

Journal Information:: Applied Physics Letters, Vol. 107, Issue 09; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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