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Title: Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

Journal Article · · Journal of Vacuum Science and Technology B
DOI:https://doi.org/10.1116/1.4922627· OSTI ID:1224764
 [1];  [2]
  1. Alabama A&M Univ., Normal, AL (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
+ Show Author Affiliations

Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC00112704
OSTI ID:
1224764
Report Number(s):
BNL-108477-2015-JA; JVTBD9; KC0403020
Journal Information:
Journal of Vacuum Science and Technology B, Vol. 33, Issue 4; ISSN 2166-2746
Publisher:
American Vacuum Society/AIPCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

References (15)

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  • Senzaki, Yoshihide; Park, Seung; Chatham, Hood
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 4 https://doi.org/10.1116/1.1761186
journal July 2004
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Crystal structure and band gap determination of HfO2 thin films journal March 2007
Textured crystallization of ultrathin hafnium oxide films on silicon substrate journal April 2007
Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition journal January 2003
High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors journal June 2011
Integrated Circuits Based on Bilayer MoS2 Transistors journal January 2012

Cited By (1)

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials journal February 2020

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Related Subjects

42 ENGINEERING
hafnium dioxide (HfO2) thin films
complementary metal-oxide semiconductor (CMOS) electronic circuits
silicon ring oscillator
Center for Functional Nanomaterials