Compensation mechanism of bromine dopants in cadmium telluride single crystals

Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

doi:10.1016/j.jcrysgro.2014.11.005

Title: Compensation mechanism of bromine dopants in cadmium telluride single crystals

Journal Article · Fri Jan 02 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.11.005· OSTI ID:1213357

Bolotnikov, A. E. ^[1]; Fochuk, P. M. ^[2]; Verzhak, Ye. V. ^[2]; Parashchuk, T. O. ^[3]; Freik, D. M. ^[3]; Panchuk, O. E. ^[2]; James, R. B. ^[1]; Gorichok, I. V. ^[3]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Yuriy Fed'kovych Chernivtsi National Univ., Chernivtsi (Ukraine)
"Vasyl Stefanyk Precarpathian National Univ.", Ivano-Frankivsk (Ukraine)

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P_Cd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻_Cd, Cd²⁺_i, V²⁺_Te, Te²⁻_i), and substitutional ones (Br⁰_Te, Br⁺_Te), as well as complexes of point defects, i.e., (Br⁺_Te V²⁻_Cd)⁻ and (2Br⁺_Te V²⁻_Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(P_Cd) are determined by two dominant defects – Br⁺_Te and (2Br⁺_Te V²⁻_Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation

Grant/Contract Number:: SC00112704

OSTI ID:: 1213357

Alternate ID(s):: OSTI ID: 1246389

Report Number(s):: BNL-108061-2015-JA; NN2001; TRN: US1500638

Journal Information:: Journal of Crystal Growth, Vol. 415, Issue C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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