Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene [Plus Supplemental Information]
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering and Center for 2-Dimensional and Layered Materials
- Inst. of Atomic and Molecular Sciences, Tapei (Taiwan)
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering
- Univ. of Texas at Dallas, Richardson, TX (United States). Dept. of Materials Science and Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Naval Research Lab. (NRL), Washington, DC (United States)
Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. We report the direct growth of highly crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG). Raman spectroscopy and photoluminescence confirms high-quality WSe2 monolayers; while transmission electron microscopy shows an atomically sharp interface and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that a tunnel barrier exists due to the van der Waals gap, and is supported by density functional theory that predicts a 1.6 eV barrier for transport from WSe2 to graphene.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1183087
- Report Number(s):
- SAND-2014-16778J; 536647
- Journal Information:
- Nano Letters, Vol. 14, Issue 12; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures