Voltage controlled spintronics device for logic applications.

Conference · Fri Sep 03 00:00:00 EDT 1999

OSTI ID:11827

Bader, S D; You, C -Y

We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistor-like concepts and re-programmable logic gates based on VCR elements.

• Research Organization: Argonne National Lab., IL (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 11827
• Report Number(s): ANL/MSD/CP-99109; TRN: AH200118%%224
• Resource Relation: Conference: 44th Annual Conference on Magnetism and Magnetic Materials, San Jose, CA (US), 11/15/1999--11/18/1999; Other Information: PBD: 3 Sep 1999
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MAGNETIC MATERIALS
MAGNETIZATION
ORIENTATION
ROTATION
SPACERS
ELECTRIC POTENTIAL
LOGIC CIRCUITS
GATING CIRCUITS