Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement
Patent
·
OSTI ID:1176047
A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.
- Research Organization:
- Delphi Technologies, Inc., Troy, MI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-02GO12020
- Assignee:
- Delphi Technologies, Inc. (Troy, MI)
- Patent Number(s):
- 7,154,291
- Application Number:
- 10/925,025
- OSTI ID:
- 1176047
- Resource Relation:
- Patent File Date: 2004 Aug 24
- Country of Publication:
- United States
- Language:
- English
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