Method for the manufacture of phase shifting masks for EUV lithography
Patent
·
OSTI ID:1175687
A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
- Research Organization:
- EUV Limited Liability Corporation, Santa Clara, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- EUV Limited Liability Corporation (Santa Clara, CA)
- Patent Number(s):
- 7,022,435
- Application Number:
- 10/256,454
- OSTI ID:
- 1175687
- Country of Publication:
- United States
- Language:
- English
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