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Title: Hafnium nitride buffer layers for growth of GaN on silicon

Patent ·
OSTI ID:1175464
;

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Research Organization:
Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76F00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
6,929,867
Application Number:
10/439,952
OSTI ID:
1175464
Country of Publication:
United States
Language:
English

References (6)

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures journal July 1995
Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal February 1992
Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source molecular beam epitaxy journal June 1997
Atomic Scale Indium Distribution in a G a N / I n 0.43 G a 0.57 N / A l 0.1 G a 0.9 N Quantum Well Structure journal November 1997
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) journal December 1989
The working principle of the hollow-anode plasma source journal November 1995

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY