Method for the fabrication of three-dimensional microstructures by deep X-ray lithography
Patent
·
OSTI ID:1175306
A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation
- Patent Number(s):
- 6,875,544
- Application Number:
- 10/264,536
- OSTI ID:
- 1175306
- Country of Publication:
- United States
- Language:
- English
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