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Title: Photonically engineered incandescent emitter

Abstract

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Inventors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174466
Patent Number(s):
6,611,085
Application Number:
09/940,962
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gee, James M., Lin, Shawn-Yu, Fleming, James G., and Moreno, James B. Photonically engineered incandescent emitter. United States: N. p., 2003. Web.
Gee, James M., Lin, Shawn-Yu, Fleming, James G., & Moreno, James B. Photonically engineered incandescent emitter. United States.
Gee, James M., Lin, Shawn-Yu, Fleming, James G., and Moreno, James B. 2003. "Photonically engineered incandescent emitter". United States. https://www.osti.gov/servlets/purl/1174466.
@article{osti_1174466,
title = {Photonically engineered incandescent emitter},
author = {Gee, James M. and Lin, Shawn-Yu and Fleming, James G. and Moreno, James B.},
abstractNote = {A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.},
doi = {},
url = {https://www.osti.gov/biblio/1174466}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 26 00:00:00 EDT 2003},
month = {Tue Aug 26 00:00:00 EDT 2003}
}

Works referenced in this record:

Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures
journal, January 1999


Metallic photonic band-gap materials
journal, October 1995


Nanostructured surfaces for tuned infrared emission for spectroscopic applications
conference, April 2000


Enhancement and suppression of thermal emission by a three-dimensional photonic crystal
journal, July 2000


Photonic crystals for narrow-band infrared emission
conference, February 2002


Development of optical MEMS carbon dioxide sensors
conference, October 2001


A three-dimensional photonic crystal operating at infrared wavelengths
journal, July 1998