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Title: Cantilever epitaxial process

Patent ·
OSTI ID:1174418
; ; ;

A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
6,599,362
Application Number:
09/754,803
OSTI ID:
1174418
Country of Publication:
United States
Language:
English

References (12)

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy journal November 1997
Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor journal November 1997
The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition journal November 1997
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth journal November 1999
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD journal January 1998
Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques journal January 1999
Advanced Pendeoepitaxy™ of GaN and Al x Ga 1−x N Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition journal January 1999
Growth and applications of Group III-nitrides journal October 1998
Anisotropic epitaxial lateral growth in GaN selective area epitaxy journal September 1997
Low-dislocation-density GaN from a single growth on a textured substrate journal November 2000
Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures journal January 1999
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy journal January 1998

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Related Subjects

36 MATERIALS SCIENCE