Cantilever epitaxial process
Patent
·
OSTI ID:1174418
A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 10.sup.7 /cm.sup.2.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 6,599,362
- Application Number:
- 09/754,803
- OSTI ID:
- 1174418
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
Journal Article
·
Mon Jul 31 00:00:00 EDT 2000
· Applied Physics Letters
·
OSTI ID:1174418
+5 more
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
Journal Article
·
Wed Jun 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:1174418
+3 more
Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
Journal Article
·
Fri Sep 01 00:00:00 EDT 2006
· Journal of Applied Physics
·
OSTI ID:1174418
+5 more