High silicon content silylating reagents for dry-developed positive-tone resists for extreme ultraviolet (13.5 nm) and deep ultraviolet (248 nm) microlithography
- and others
Recent results in the use of disilanes as silylating reagents for near-surface imaging with deep-UV (248 nm) and EUV (13.5 nm) lithography are reported. A relatively thin imaging layer of a photo-cross-linking resist is spun over a thicker layer of hard-baked resist that functions as a planarizing layer and antireflective coating. Photoinduced acid generation and subsequent heating crosslinks and renders exposed areas impermeable to an aminodisilane that reacts with the unexposed regions. Subsequent silylation and reactive ion etching afford a positive-tone image. The use of disilanes introduces a higher concentration of silicon into the polymer than is possible with silicon reagents that incorporate only one silicon atom per reactive site. The higher silicon content in the silylated polymer increases etching selectivity between exposed and unexposed regions and thereby increases the contrast. Additional improvements that help to minimize flow during silylation are also discussed, including the addition of bifunctional disilanes. We have resolved high aspect ratio, very high quality 0.20 {mu}m line and space patterns at 248 nm with a stepper having a numerical aperture (NA)= 0.53, and have resolved {<=} 0.15 {mu}m line and spaces at 13.5 nm.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 116680
- Report Number(s):
- SAND-95-2194C; CONF-9409376-1; ON: DE96001724; TRN: 95:007701
- Resource Relation:
- Conference: Radiation effects on polymers, Washington, DC (United States), 9-11 Sep 1994; Other Information: PBD: 1994
- Country of Publication:
- United States
- Language:
- English
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