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Title: Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation

Abstract

An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1163675
Patent Number(s):
8,884,228
Application Number:
13/359,730
Assignee:
Savannah River Nuclear Solutions, LLC (Aiken, SC)
DOE Contract Number:  
AC09-08SR22470
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jan 27
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Washington, II, Aaron L, Duff, Martine C, Teague, Lucile C, Burger, Arnold, and Groza, Michael. Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation. United States: N. p., 2014. Web.
Washington, II, Aaron L, Duff, Martine C, Teague, Lucile C, Burger, Arnold, & Groza, Michael. Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation. United States.
Washington, II, Aaron L, Duff, Martine C, Teague, Lucile C, Burger, Arnold, and Groza, Michael. 2014. "Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation". United States. https://www.osti.gov/servlets/purl/1163675.
@article{osti_1163675,
title = {Modification of solid state CdZnTe (CZT) radiation detectors with high sensitivity or high resolution operation},
author = {Washington, II, Aaron L and Duff, Martine C and Teague, Lucile C and Burger, Arnold and Groza, Michael},
abstractNote = {An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.},
doi = {},
url = {https://www.osti.gov/biblio/1163675}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 11 00:00:00 EST 2014},
month = {Tue Nov 11 00:00:00 EST 2014}
}

Works referenced in this record:

Semiconductor radiation spectrometer
patent, April 2002


Handheld CZT radiation detector
patent, August 2004


Monolithic x-ray detector with staggered detection areas
patent, March 2007


Multi-mode switch for plasma display panel
patent, January 2009


Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride
journal, July 2003


THM, a breakthrough in Hg 1− x Cd x Te bulk metallurgy
journal, January 1985

  • Triboulet, R.; Duy, T. Nguyen; Durand, A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 3, Issue 1
  • https://doi.org/10.1116/1.573254

Growth and characterization of CdTe single crystals for radiation detectors
journal, October 1999

  • Funaki, Minoru; Ozaki, Tsutomu; Satoh, Kazuyuki
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 436, Issue 1-2, p. 120-126
  • https://doi.org/10.1016/S0168-9002(99)00607-5

Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients
journal, January 2010