3D, Flash, Induced Current Readout for Silicon Sensors
- Univ. of Hawaii, Honolulu, HI (United States)
A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge
- Research Organization:
- Univ. of Hawaii, Honolulu, HI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- DOE Contract Number:
- SC0009961
- OSTI ID:
- 1150720
- Report Number(s):
- DOE-UH-0009961
- Country of Publication:
- United States
- Language:
- English
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