Novel compound semiconductor devices based on III-V nitrides
Conference
·
OSTI ID:114012
- Florida Univ., Gainesville, FL (United States)
- AT & T Bell Laboratories, Murray Hill, NJ (United States); and others
New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 114012
- Report Number(s):
- SAND-95-2180C; CONF-951243-1; ON: DE96000708
- Resource Relation:
- Conference: 1. IEEE international Caracas conference on devices circuits and systems, Caracas (Venezuela), 12-14 Dec 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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