Sputter deposition of thin film MIM capacitors on LTCC substrates for RF bypass and filtering applications
- Missouri University of Science and Technology
- Kansas State University
- Honeywell Federal Manufacturing & Technologies
Thin film capacitors for RF bypass and filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) design featuring 200 nm thick Al electrodes and a 300 nm thick Al{sub 2}O{sub 3} dielectric layer, with dimensions varied between ~150x150 μm and ~750x750 μm. DC current-voltage measurements (E ≤ 5 MV/cm) coupled with impedance analysis (≤15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 MΩ) and low loss (tan δ <0.1). A second set of capacitors were made under the same experimental conditions with device geometries optimized for high frequency (≥200 MHz) applications. These capacitors featured temperature coefficient of capacitance (TCC) values between 500 and 1000 ppm/°C as well as low loss and high self-resonant frequency performance (ESR <0.6 Ohms at self-resonance of 5.7 GHz for 82 pF). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes.
- Research Organization:
- Kansas City Plant (KCP), Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Contributing Organization:
- Missouri University of Science & Technology, Kansas State University
- DOE Contract Number:
- DE-NA0000622
- OSTI ID:
- 1134026
- Report Number(s):
- KCP-613-8988
- Journal Information:
- Proceedings of the 2011 International Symposium on Microelectronics, Conference: 44th International Symposium on Microelectronics
- Country of Publication:
- United States
- Language:
- English
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