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Title: Atomic layer deposition of quaternary chalcogenides

Patent ·
OSTI ID:1133663

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
Uchicago Argonne, LLC (Chicago, IL)
Patent Number(s):
8,741,386
Application Number:
13/631,135
OSTI ID:
1133663
Country of Publication:
United States
Language:
English

References (6)

Self -Organizing Nanostructured Solar Cells patent-application December 2009
Solar Cell Absorber Layer Formed From Equilibrium Precursors patent-application September 2010
Atomic Layer Deposition of the Quaternary Chalcogenide Cu 2 ZnSnS 4 journal August 2012
Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn 2 S 3 , and SnS 2 ) on Glass journal July 1999
Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide journal September 2010
Atomic Layer Deposition of Tin Monosulfide Thin Films journal September 2011