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Title: Transparent conducting oxides and production thereof

Abstract

Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Inventors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1133452
Patent Number(s):
8,734,621
Application Number:
11/718,628
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2007 Jan 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gessert, Timothy A, Yoshida, Yuki, and Coutts, Timothy J. Transparent conducting oxides and production thereof. United States: N. p., 2014. Web.
Gessert, Timothy A, Yoshida, Yuki, & Coutts, Timothy J. Transparent conducting oxides and production thereof. United States.
Gessert, Timothy A, Yoshida, Yuki, and Coutts, Timothy J. 2014. "Transparent conducting oxides and production thereof". United States. https://www.osti.gov/servlets/purl/1133452.
@article{osti_1133452,
title = {Transparent conducting oxides and production thereof},
author = {Gessert, Timothy A and Yoshida, Yuki and Coutts, Timothy J},
abstractNote = {Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.},
doi = {},
url = {https://www.osti.gov/biblio/1133452}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 27 00:00:00 EDT 2014},
month = {Tue May 27 00:00:00 EDT 2014}
}

Works referenced in this record:

Gallium nitride based II-V group compound semiconductor device
patent-application, March 2002


Patterned ceramic films and method for producing the same
patent, July 2006


Works referencing / citing this record: