Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere
Patent
·
OSTI ID:1133446
A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Number(s):
- 8,734,674
- Application Number:
- 13/457,070
- OSTI ID:
- 1133446
- Country of Publication:
- United States
- Language:
- English
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