Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.
Journal Article
·
OSTI ID:1128733
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- DOE Contract Number:
- AC02-07CH11359
- OSTI ID:
- 1128733
- Report Number(s):
- FERMILAB-PUB-13-331-PPD
- Country of Publication:
- United States
- Language:
- English
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