Development of Spintronic Bandgap Materials
The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.
- Research Organization:
- Univ. of Pittsburgh, PA (United States)
- Sponsoring Organization:
- USDOE; Basic energy Sciences
- Contributing Organization:
- University of Pittsburgh, UC Santa Barbara, University of Virginia
- DOE Contract Number:
- FG02-07ER46421
- OSTI ID:
- 1120126
- Report Number(s):
- DOE-UP-46421
- Country of Publication:
- United States
- Language:
- English
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