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Title: Large-scale lateral nanowire arrays nanogenerators

Patent ·
OSTI ID:1117632

In a method of making a generating device, a plurality of spaced apart elongated seen members are deposited onto a surface of a flexible non-conductive substrate. An elongated conductive layer is applied to a top surface and a first side of each seed member, thereby leaving an exposed second side opposite the first side. A plurality of elongated piezoelectric nanostructures is grown laterally from the second side of each seed layer. A second conductive material is deposited onto the substrate adjacent each elongated first conductive layer so as to be soupled the distal end of each of the plurality of elongated piezoelectric nanostructures. The second conductive material is selected so as to form a Schottky barrier between the second conductive material and the distal end of each of the plurality of elongated piezoelectric nanostructures and so as to form an electrical contact with the first conductive layer.

Research Organization:
Georgia Tech Research Corporation, Atlanta, GA, USA
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-07ER46394
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Number(s):
8,623,451
Application Number:
12/943,499
OSTI ID:
1117632
Resource Relation:
Patent File Date: 2010 Nov 10
Country of Publication:
United States
Language:
English

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