Fast and slow border traps in MOS devices
Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of fast (switching times between {approximately} 10{sup {minus}6} and 1 s) and slow (switching times greater than {approximately} 1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that different types of E{prime} defects (trivalent Si centers in SiO{sub 2} associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Defense Nuclear Agency, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 110801
- Report Number(s):
- SAND-95-2056C; CONF-9509107-2; ON: DE95017894
- Resource Relation:
- Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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