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Title: Bypass diode for a solar cell

Patent ·
OSTI ID:1107919
; ; ;

Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

Research Organization:
SunPower Corporation (San Jose, CA)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07G017043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
8,580,599
Application Number:
13/371,241
OSTI ID:
1107919
Country of Publication:
United States
Language:
English

References (12)

Solar cell comprising a bypass diode patent September 2002
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application February 2008
Monolithic bypass diode and photovoltaic cell with bypass diode formed in back of substrate patent-application May 2007
Trench process and structure for backside contact solar cells with polysilicon doped regions patent October 2010
Monolithic bypass-diode and solar-cell string assembly patent October 2003
Bifacial solar cell patent September 1997
Lightweight solar module and method of fabrication patent November 2001
Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application March 2011
Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions patent-application December 2009
Monolithic Integration of Bypass Diodes with a Thin Film Solar Module patent-application November 2011
Solar cell with integrated bypass diode and method patent April 1997
Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions patent-application January 2011

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Related Subjects

14 SOLAR ENERGY