Enhanced surface hardness in nitrogen-implanted silicon carbide
- Georgia Institute of Technology, Atlanta, GA (United States); and others
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation ({beta}-Si{sub 1.5}C{sub 1.5}N{sub 4}, the homologue of equilibrium {beta}-Si{sub 3}N{sub 4} or hypothetical {beta}-C{sub 3}N{sub 4}) by high dose N{sup +}-implantation into polycrystalline {beta}-SiC (cubic). Thin films were formed using 100 keV implantations with varying ion doses in the range from 1.1 x 10{sup 17} to 27.1 x 10{sup 17} N/cm{sup 2}, and target temperatures between -196{degrees}C and 980{degrees}C. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces (up to 860{degrees}C) contained {approximately}0.1 {mu}m thick buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at. % with increasing doses, suggesting formation of a new phase. Implantation to doses of 1.1 x 10{sup 17} and 2.3 x 10{sup 17} N/cm{sup 2} at 980{degrees}C caused enhanced surface hardness compared to SiC.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Georgia Inst. of Tech., Atlanta, GA (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 110722
- Report Number(s):
- CONF-9505122-7; ON: DE95017446; TRN: 95:007228
- Resource Relation:
- Conference: International conference on ion beam analysis, Tempe, AZ (United States), 22-26 May 1995; Other Information: PBD: Jun 1995
- Country of Publication:
- United States
- Language:
- English
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