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Title: Frequency selective infrared sensors

Patent ·
OSTI ID:1083793
;

A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL8500
Assignee:
Sandia Corporation (Albuquerque, NM
Patent Number(s):
8,452,134
Application Number:
12/871,334
OSTI ID:
1083793
Country of Publication:
United States
Language:
English

References (9)

Plasmon-based photosensors comprising a very thin semiconducting region journal May 2009
Sub-wavelength low-noise infrared detectors patent May 2009
Plasmonic enhanced infrared detector element patent February 2008
Plasmonic integrated optics: Going the last few microns conference July 2010
Metamaterial-inspired high-absorption surfaces for thermal infrared applications conference February 2010
Cavity ring-down detection of surface plasmon resonance in an optical fiber resonator patent April 2008
Photodetector with a Plasmonic Structure patent-application June 2011
Plasmonic antireflection surfaces for the mid-infrared conference February 2007
Fabrication and testing of plasmonic optimized transmission and reflection coatings conference February 2008

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