Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres
Patent
·
OSTI ID:1083610
A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,425,681
- Application Number:
- 12/388,103
- OSTI ID:
- 1083610
- Country of Publication:
- United States
- Language:
- English
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