Method of plasma etching GA-based compound semiconductors

Qiu, Weibin; Goddard, Lynford L.

Title: Method of plasma etching GA-based compound semiconductors

Patent · Tue Jan 01 00:00:00 EST 2013

OSTI ID:1082931

Qiu, Weibin; Goddard, Lynford L.

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC52-07NA27344

Assignee:: The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Number(s):: 8,343,878

Application Number:: 12/638,721

OSTI ID:: 1082931

Country of Publication:: United States

Language:: English

References (29)

Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP) Maher, H.; Etrillard, J.; Decobert, J. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) https://doi.org/10.1109/ICIPRM.1998.712786	conference	January 1998
Dry etching method for a gallium nitride type compound semiconductor Furukawa, Katsuki; Sugahara, Satoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5693180 US Patent Document 5,693,180	patent	December 1997
Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl[sub 3] Plasma Lim, W. T.; Baek, I. G.; Jung, P. G. Journal of The Electrochemical Society, Vol. 151, Issue 3 https://doi.org/10.1149/1.1643741	journal	January 2004
High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry Jalabert, Laurent; Dubreuil, Pascal; Carcenac, Franck Microelectronic Engineering, Vol. 85, Issue 5-6 https://doi.org/10.1016/j.mee.2008.01.063	journal	May 2008
Nanohole Arrays with Sub-30 nm Diameter Formed on GaAs Using Nanoporous Alumina Mask Jung, Mi; Lee, Seok; Jhon, Young Min Japanese Journal of Applied Physics, Vol. 46, Issue 7A https://doi.org/10.1143/JJAP.46.4410	journal	July 2007
Dry etching method and semiconductor device Komatani, Tsutomu https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050236365 US Patent Application 11/115272; 20050236365	patent-application	October 2005
Cl[sub 2] plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source Berg, E. W.; Pang, S. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 6 https://doi.org/10.1116/1.591056	journal	January 1999
Sidewall passivation assisted by a silicon coverplate during Cl[sub 2]–H[sub 2] and HBr inductively coupled plasma etching of InP for photonic devices Bouchoule, S.; Patriarche, G.; Guilet, S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 2 https://doi.org/10.1116/1.2898455	journal	January 2008
Smooth and vertical-sidewall InP etching using Cl[sub 2]/N[sub 2] inductively coupled plasma Lin, Jie; Leven, Andreas; Weimann, N. G. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 2 https://doi.org/10.1116/1.1648066	journal	January 2004
N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes Lee, K. H.; Guilet, S.; Sagnes, I. 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials https://doi.org/10.1109/ICIPRM.2007.381163	conference	May 2007
Study of GaAs and GaInP etching in Cl2/Ar electron cyclotron resonance plasma Yoon, S. Thin Solid Films, Vol. 394, Issue 1-2 https://doi.org/10.1016/S0040-6090(01)01139-7	journal	August 2001
Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system Chung, Chen-Kuei Journal of Micromechanics and Microengineering, Vol. 14, Issue 4 https://doi.org/10.1088/0960-1317/14/4/029	journal	February 2004
Effect of H[sub 2] on the etch profile of InP/InGaAsP alloys in Cl[sub 2]/Ar/H[sub 2] inductively coupled plasma reactive ion etching chemistries for photonic device fabrication Rommel, Sean L.; Jang, Jae-Hyung; Lu, Wu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, Issue 4 https://doi.org/10.1116/1.1486232	journal	January 2002
Study of grass formation in GaAs backside via etching using inductively coupled plasma system Nam, P. S.; Ferreira, L. M.; Lee, T. Y. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 6 https://doi.org/10.1116/1.1320803	journal	January 2000
The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface Dultsev, F. N.; Nenasheva, L. A. Applied Surface Science, Vol. 253, Issue 3 https://doi.org/10.1016/j.apsusc.2006.01.073	journal	November 2006
High-density plasma etching of compound semiconductors Shul, R. J.; McClellan, G. B.; Briggs, R. D. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3 https://doi.org/10.1116/1.580696	journal	May 1997
Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4 Etrillard, J.; Ossart, P.; Patriarche, G. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3 https://doi.org/10.1116/1.580695	journal	May 1997
Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl ₃ /Cl ₂ /Ar inductively coupled plasma Edwards, G. T.; Sobiesierski, A.; Westwood, D. I. Semiconductor Science and Technology, Vol. 22, Issue 9 https://doi.org/10.1088/0268-1242/22/9/006	journal	August 2007
Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby Lee, Kyu Han; Kim, Sun Woon; Kim, Je Won https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6844569 US Patent Document 6,844,569	patent	January 2005
Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment Choquette, Kent D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 1 https://doi.org/10.1116/1.587982	journal	January 1995
Method of surface treatment of semiconductor substrates Bhardwaj, Jyoti Kiron; Ashraf, Huma; Khamsehpour, Babak https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6051503 US Patent Document 6,051,503	patent	April 2000
Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers Lee, J. W.; Jung, P. G.; Devre, M. Solid-State Electronics, Vol. 46, Issue 5 https://doi.org/10.1016/S0038-1101(01)00328-8	journal	May 2002
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas Lee, J. W.; Devre, M. W.; Reelfs, B. H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 4 https://doi.org/10.1116/1.582329	journal	July 2000
Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry Lu, J.; Meng, X.; SpringThorpe, A. J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 3 https://doi.org/10.1116/1.1667502	journal	January 2004
A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates Li, X.; Cao, X.; Zhou, H. Microelectronic Engineering, Vol. 83, Issue 4-9 https://doi.org/10.1016/j.mee.2006.01.074	journal	April 2006
Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma Lee, Hyun Woo; Kim, Mansu; Min, Nam-Ki Japanese Journal of Applied Physics, Vol. 47, Issue 8 https://doi.org/10.1143/JJAP.47.6917	journal	August 2008
Deeply etched waveguide structures for quantum cascade lasers Schartner, S.; Golka, S.; Pflügl, C. Microelectronic Engineering, Vol. 83, Issue 4-9 https://doi.org/10.1016/j.mee.2006.01.032	journal	April 2006
Reactive ion etching lag on high rate oxide etching using high density plasma Akimoto, Takeshi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 6 https://doi.org/10.1116/1.588006	journal	November 1995
Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures Golka, S.; Austerer, M.; Pflügl, C. MRS Proceedings, Vol. 829 https://doi.org/10.1557/PROC-829-B5.2	journal	January 2004

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