Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

doi:10.1063/1.3530634

Title: Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3530634· OSTI ID:1076502

Limbach, F. ^[1]; Gotschke, T. ^[2]; Stoica, T. ^[1]; Calarco, R. ^[1]; Sutter, E. ^[3]; Ciston, J. ^[3]; Cusco, R. ^[4]; Artus, L. ^[4]; Kremling, S. ^[5]; Hofling, S. ^[5]; Worschech, L. ^[5]; Grutzmacher, D. ^[6]

Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
Institute of Bio- and Nanosystems (IBN-1), Research Centre JÃ¼lich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Inst. Juame Almera, Barcelona (Spain)
Univ. of Wurzburg (Germany)
Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

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Research Organization:: Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of FutureInformation Technology (Germany); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Technology Development (EE-20)

Grant/Contract Number:: AC02-98CH1-886; MAT2007-63617

OSTI ID:: 1076502

Journal Information:: Journal of Applied Physics, Vol. 109, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers Nguyen, Hieu Pham Trung; Djavid, Mehrdad; Woo, Steffi Y. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep07744	journal	January 2015

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