SiC Power MOSFET with Improved Gate Dielectric
- Structured Materials Industries, Inc., Piscataway, NJ (United States)
In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.
- Research Organization:
- Structured Materials Industries, Inc., Piscataway, NJ (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- FG02-06ER86288
- OSTI ID:
- 1067486
- Report Number(s):
- DOE-STRUCTURED MATERIALS-ER86288
- Country of Publication:
- United States
- Language:
- English
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