TEM and RBS studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing

Sadana, D K; Strathman, M; Washburn, J; Booker, G R

doi:10.1016/B978-0-12-746850-1.50068-2

Title: TEM and RBS studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing

Journal Article · Tue Jan 01 00:00:00 EST 1980 · Journal of Applied Physics

DOI:https://doi.org/10.1016/B978-0-12-746850-1.50068-2· OSTI ID:1064034

Sadana, D K; Strathman, M; Washburn, J; Booker, G R

This work is aimed at studying the regrowth behaviour of single and double buried damage layers on subsequent laser annealing of P⁺ implanted Si, implanted at 120 keV to doses of 5 x 10¹⁴/cm² and 7.5 x10¹⁵/cm², respectively. A Q-switched ruby laser operating at a wavelength of 0.695_micro m was used for the annealing. 90° cross sectional TEM and MeV He⁺ channelling spectroscopy were used to examine the damage structures and their depth distributions. At 0.9 J/cm², TEM results showed that the single buried damage layer regrew into two discrete damage layers. At 2.0 J/cm², TEM results showed that the first layer in the double buried damage layers type structures either completely annealout out, leaving a partially annealed second layer consisting of damage clusters or had dislocations in the first damage layer region that extended from the surface and were in direct contact with the deeper lying second layer of damage clusters. The MeV He⁺ channelling spectra for the above samples were in agreement with the TEM results.