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Title: Smooth electrode and method of fabricating same

Patent ·
OSTI ID:1063201
 [1];  [2];  [3]
  1. Northville, NY
  2. Albany, NY
  3. Niskayuna, NY
+ Show Author Affiliations

A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Research Organization:
National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-04NT42324
Assignee:
General Electric Company (Niskayuna, NY)
Patent Number(s):
8,242,006
Application Number:
11/962,494
OSTI ID:
1063201
Country of Publication:
United States
Language:
English

References (2)

Through-wafer copper electroplating for three-dimensional interconnects journal June 2002
A novel electrically conductive wafer through hole filled vias interconnect for 3D MEMS packaging conference May 2003

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Related Subjects

36 MATERIALS SCIENCE