Doping of GaN{sub 1-x}As{sub x} with high As content
Abstract
Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- Materials Sciences Division
- OSTI Identifier:
- 1052162
- Report Number(s):
- LBNL-5209E
Journal ID: ISSN 0021-8979
- DOE Contract Number:
- DE-AC02-05CH11231
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 9; Related Information: Journal Publication Date: 11/2/2011; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Levander, A X, Novikov, S V, Liliental-Weber, Z, dos Reis, R, Dubon, O D, Wu, J, Foxon, C T, Yu, K M, and Walukiewicz, W. Doping of GaN{sub 1-x}As{sub x} with high As content. United States: N. p., 2011.
Web. doi:10.1063/1.3657779.
Levander, A X, Novikov, S V, Liliental-Weber, Z, dos Reis, R, Dubon, O D, Wu, J, Foxon, C T, Yu, K M, & Walukiewicz, W. Doping of GaN{sub 1-x}As{sub x} with high As content. United States. https://doi.org/10.1063/1.3657779
Levander, A X, Novikov, S V, Liliental-Weber, Z, dos Reis, R, Dubon, O D, Wu, J, Foxon, C T, Yu, K M, and Walukiewicz, W. 2011.
"Doping of GaN{sub 1-x}As{sub x} with high As content". United States. https://doi.org/10.1063/1.3657779. https://www.osti.gov/servlets/purl/1052162.
@article{osti_1052162,
title = {Doping of GaN{sub 1-x}As{sub x} with high As content},
author = {Levander, A X and Novikov, S V and Liliental-Weber, Z and dos Reis, R and Dubon, O D and Wu, J and Foxon, C T and Yu, K M and Walukiewicz, W},
abstractNote = {Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.},
doi = {10.1063/1.3657779},
url = {https://www.osti.gov/biblio/1052162},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 110,
place = {United States},
year = {Thu Sep 22 00:00:00 EDT 2011},
month = {Thu Sep 22 00:00:00 EDT 2011}
}
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