Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films
We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 1051776
- Report Number(s):
- LBNL-5165E
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 11; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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