Atomistic modeling of dislocation-interface interactions

Conference · Mon Jan 31 00:00:00 EST 2011

OSTI ID:1050021

Wang, Jian ^[1]; Valone, Steven M ^[1]; Beyerlein, Irene J ^[1]; Misra, Amit ^[1]; Germann, T C ^[1]

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1. Los Alamos National Laboratory

Using atomic scale models and interface defect theory, we first classify interface structures into a few types with respect to geometrical factors, then study the interfacial shear response and further simulate the dislocation-interface interactions using molecular dynamics. The results show that the atomic scale structural characteristics of both heterophases and homophases interfaces play a crucial role in (i) their mechanical responses and (ii) the ability of incoming lattice dislocations to transmit across them.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC52-06NA25396
• OSTI ID: 1050021
• Report Number(s): LA-UR-11-00750; LA-UR-11-750; TRN: US201218%%425
• Resource Relation: Conference: The 3rd ICHMM, 2011 ; May 22, 2011 ; Shanghai, China
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
DISLOCATIONS
SCALE MODELS
SHEAR
SIMULATION