ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES
Air Products set out to investigate the impact of additives on the deposition rate of both CSi and Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.
- Research Organization:
- Air Products and Chemicals, Inc.
- Sponsoring Organization:
- USDOE; USDOE EE Office of Solar Energy Technology (EE-2A)
- DOE Contract Number:
- EE0000580
- OSTI ID:
- 1049689
- Report Number(s):
- DOE/EE/0000580-1
- Country of Publication:
- United States
- Language:
- English
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