Understanding Light-Induced Degradation of c-Si Solar Cells: Preprint
We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (..tau..) in sister wafers. We found that the recovery of..tau.. in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Siinterface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1047337
- Report Number(s):
- NREL/CP-5200-54200; TRN: US201216%%200
- Resource Relation:
- Conference: Presented at the 2012 IEEE Photovoltaic Specialists Conference, 3-8 June 2012, Austin, Texas
- Country of Publication:
- United States
- Language:
- English
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